wfy wfy wfy wfy 5 5 5 5 n0 n0 n0 n0 3 3 3 3 symbol parameter v alue units v dss drain source v o ltage 30 v i d continuous drain cur r ent 5 .8 a i dm drain cur r ent pulsed 30 a p d 0.25 w t c= 7 5 0.3 v gs gate to source v o ltage 8 v e sd esd capability (note 3 ) c=100p f , r s = 150 0 ? 225 v t j, t stg junction and storage t e mperatu r e -55~150 t l maximum l ead t e mperatu r e for soldering purp o ses 260 c o p y r igh t @ w i n s em i microelectronics c o . , lt d . , a l l ri g h t r e s er v ed . 3 3 3 3 0v 0v 0v 0v n n n n ? ? ? ? channel channel channel channel mosfet mosfet mosfet mosfet features 5 .8a, 3 0 v , r ds(on ) (max 33 m ? )@ v g s = -4. 5v 1. 4 v rated for low v o ltage gate drive so t -23 surface mount for small footp r int single pulse av alanche energy rated halogen-free gener a l de s cription this power mos f et i s prod u ced using winsemi s advanced d d d d mos technolog y . this l atest technology has been especially designed to minimize on-state r esistance, have a high rugg e d g g g g avalanche characteristics. this de v ices is specially w ell s uited for s s s s load s w itching and p a s w itching. so so so so t t t t -23 -23 -23 -23 absolute m a ximum r ating s ( t c =2 5 unless otherwise noted) t o tal power dissipation(note 1) ma x imum r a ti n gs are th o se v a lu e s b ey ond w h ich de v ice d a mage can o c c u r . m ax imum ra t in g s ap p li e d to the de v ice a r e in d i v id u al st r e s s limit v a lu e s (n o t no r mal o p e r a ti n g co n d i ti o n s ) a nd a r e not v a lid sim u lt a n e ou s l y . if th e se limits a r e e x ce e d e d , de v ice fu n c t io n a l o p e r a ti o n is n o t impl i e d , dam a g e may o c c u r and r e li a bi l ity may b e a f fe c t e d. thermal c haracteristics symbol parameter v a l ue units min t y p max r qja the r mal resistance, junct i on-to-ambien t (note 1) - - 170 /w r qja the r mal resistance, junct i on-to-ambien t (note 1) 1 1 0 /w r qja the r mal resistance, junct i on-to-ambien t (note 2) 300 /w n o te 1 : s u rf a c e ? m ou n t e d o n fr4 bo a rd us i n g 1 in s q p a d s i z e (cu a r e a = 1 . 1 2 7 in s q [1 o z ] i n c l u d i n g tr a c e s ) n o te 2 : s u rf a c e ? mou n t e d o n fr4 bo a rd u s i ng the min i mum re c o mm e n d ed p a d s i z e. note 3 : esd rat i ng in f o rm a ti o n: hbm cla s s 0 re v . a jun .2 0 11 p 0 3 - 3
wfy wfy wfy wfy 5 5 5 5 n0 n0 n0 n0 3 3 3 3 2 / 5 steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance electrical characteristics (tc = 25 c) ch a racteristics sym b o l test co n diti o n min ty p e max un i t gate leakage curren t ( n o te 4) i gss v gs = 12 v, v ds = 0 v - - 100 na drain c ut ? off c urrent ( n o te 4 ) i dss v ds = 24 v , v gs = 0 v - - 1 a drain ? source breakdown v oltage v (br)dss i d = 250 a, v gs = 0 v 30 - - v gate threshold v oltage v gs(th) v ds = v g s i d = 250 a 0.7 1.1 1 .4 v drain ? source o n resistance r ds(on) v gs = 4.5 v , i d = 5 a - 28 33 m ? v gs = 2 .5 v , i d = 4 a 44 52 input capacitance c iss v ds = 15 v, v gs = 0 v, f = 1 mhz - 823 1050 pf reverse transfer c apacitance c rss - 77 - out p ut capacitance c oss - 99 - switching time (note 5 ) tur n -on delay t i me t d(o n ) v g s = 10 v , v d s = 15 v , r g = 3 ? , r l = 2.7 ? - 3.3 5 ns tur n ? on rise time t r - 4.8 7 tur n -off delay t i me t d(off) - 26.3 40 tur n ? off fall time t f - 4. 1 6 total gate c harge qg v g s = 4.5 v , v d s = 15 v , i d = 5.8 a - 9.7 12 nc gate ? source charge qgs - 1. 6 - gate ? drain ( mille r ) char g e qgd - 3.1 - sourc e ? drain r atings and c haracteristics (ta = 25 c) ch a racteristics symbol test co n dition min type max unit continuous drain reverse current i dr - - - 5.8 a pul s e drain re v er s e c urrent i drp - - - 30 a forw a rd v oltage (diode) v dsf i dr = 1a, v gs = 0 v - 0.7 1 1. 0 v n o te 4 : p u l s e t es t: p u l s e w i d t h 30 0 s , d u ty cy c le 3 2 %. n o te 5 : switch i n g c h a r a c t er i s t i cs are in d e p e n d e nt of op e r a ti n g ju n c t ion tem p e r at u r e . t h is tr a n s i s tor is an el e c t r o s t a tic s e n s i ti v e d ev ice pl ea s e h a n d le w ith ca u ti o n
wfy wfy wfy wfy 5 5 5 5 n0 n0 n0 n0 3 3 3 3 3 / 5 steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance
wfy wfy wfy wfy 5 5 5 5 n0 n0 n0 n0 3 3 3 3 4 / 5 steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance
wfy wfy wfy wfy 5 5 5 5 n0 n0 n0 n0 3 3 3 3 5 / 5 steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance so so so so t t t t - - - - 23 23 23 23 package package package package d d d d imension imension imension imension dim dim dim dim millimters millimters millimters millimters inches inches inches inches min min min min max max max max min min min min max max max max a 0.95 0.037 a1 1.90 0.074 b 2.60 3.00 0.102 0. 1 1 8 c 1.40 1.70 0.055 0.067 d 2.80 3.10 0. 1 10 0.122 e 1.00 1.30 0.039 0.051 f 0.00 0.10 0.000 0.004 g 0.35 0.50 0.014 0.020 h 0.10 0.20 0.004 0.008 i 0.30 0.60 0.012 0.024 j 50 o 10 o 5 0 o 10 o
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